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?2003 silicon storage technology, inc. s71149-05-000 11/03 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. mpf is a trademark of silicon storage technology, inc. these specifications are subject to change without notice. data sheet 512 kbit (x8) multi-purpose flash sst39sf512 features: ? organized as 64k x8 single 4.5-5.5v read and write operations superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention low power consumption (typical values at 14 mhz) ? active current: 10 ma (typical) ? standby current: 10 a (typical) sector-erase capability ? uniform 4 kbyte sectors fast read access time: ? 70 ns latched address and data fast erase and byte-program ? sector-erase time: 7 ms (typical) ? chip-erase time: 15 ms (typical) ? byte-program time: 20 s (typical) ? chip rewrite time: 2 seconds (typical) automatic write timing ? internal v pp generation end-of-write detection ? toggle bit ? data# polling ttl i/o compatibility jedec standard ? flash eeprom pinouts and command sets packages available ? 32-lead plcc ? 32-lead tsop (8mm x 14mm) ? 32-pin pdip product description the sst39sf512 are cmos multi-purpose flash (mpf) manufactured with sst?s proprietary, high performance cmos superflash technology. the split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. the sst39sf512 devices write (program or erase) with a 4.5-5.5v power supply. the sst39sf512 device conforms to jedec standard pinouts for x8 memories. featuring high performance byte-program, the sst39sf512 devices provide a maximum byte-program time of 30 sec. these devices use toggle bit or data# polling to indicate the completion of program operation. to protect against inadvertent write, they have on-chip hard- ware and software data protection schemes. designed, manufactured, and tested for a wide spectrum of applica- tions, these devices are offered with a guaranteed typical endurance of 100,000 cycles. data retention is rated at greater than 100 years. the sst39sf512 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. for all system applications, they significantly improve performance and reliability, while lowering power consumption. they inherently use less energy during erase and program than alternative flash technologies. the total energy consumed is a function of the applied voltage, current, and time of application. since for any given voltage range, the superflash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash technologies. these devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. the superflash technology provides fixed erase and pro- gram times, independent of the number of erase/program cycles that have occurred. therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated erase/pro- gram cycles. to meet high density, surface mount requirements, the sst39sf512 are offered in 32-lead plcc, 32-lead tsop, and a 600 mil, 32-pin pdip packages. see figures 1, 2, and 3 for pin assignments. sst39sf5125.0v 512kb (x8) mpf memory
2 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 device operation commands are used to initiate the memory operation func- tions of the device. commands are written to the device using standard microprocessor write sequences. a com- mand is written by asserting we# low while keeping ce# low. the address bus is latched on the falling edge of we# or ce#, whichever occurs last. the data bus is latched on the rising edge of we# or ce#, whichever occurs first. read the read operation of the sst39sf512 is controlled by ce# and oe#, both have to be low for the system to obtain data from the outputs. ce# is used for device selection. when ce# is high, the chip is deselected and only standby power is consumed. oe# is the output control and is used to gate data from the output pins. the data bus is in high impedance state when either ce# or oe# is high. refer to the read cycle timing diagram for further details (figure 4). byte-program operation the sst39sf512 are programmed on a byte-by-byte basis. before programming, the sector where the byte exists must be fully erased. the program operation is accomplished in three steps. the first step is the three-byte load sequence for software data protection. the second step is to load byte address and byte data. during the byte- program operation, the addresses are latched on the falling edge of either ce# or we#, whichever occurs last. the data is latched on the rising edge of either ce# or we#, whichever occurs first. the third step is the internal pro- gram operation which is initiated after the rising edge of the fourth we# or ce#, whichever occurs first. the program operation, once initiated, will be completed, within 30 s. see figures 5 and 6 for we# and ce# controlled program operation timing diagrams and figure 15 for flowcharts. during the program operation, the only valid reads are data# polling and toggle bit. during the internal program operation, the host is free to perform additional tasks. any commands written during the internal program operation will be ignored. sector-erase operation the sector-erase operation allows the system to erase the device on a sector-by-sector basis. the sector architecture is based on uniform sector size of 4 kbyte. the sector- erase operation is initiated by executing a six-byte com- mand load sequence for software data protection with sector-erase command (30h) and sector address (sa) in the last bus cycle. the sector address is latched on the fall- ing edge of the sixth we# pulse, while the command (30h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end of erase can be determined using either data# polling or toggle bit methods. see figure 9 for timing waveforms. any commands written during the sector- erase operation will be ignored. chip-erase operation the sst39sf512 provide chip-erase operation, which allows the user to erase the entire memory array to the ?1s? state. this is useful when the entire device must be quickly erased. the chip-erase operation is initiated by executing a six- byte software data protection command sequence with chip-erase command (10h) with address 5555h in the last byte sequence. the erase operation begins with the rising edge of the sixth we# or ce#, whichever occurs first. dur- ing the erase operation, the only valid read is toggle bit or data# polling. see table 4 for the command sequence, figure 10 for timing diagram, and figure 18 for the flow- chart. any commands written during the chip-erase opera- tion will be ignored. write operation status detection the sst39sf512 provide two software means to detect the completion of a write (program or erase) cycle, in order to optimize the system write cycle time. the software detection includes two status bits: data# polling (dq 7 ) and to g g l e b i t ( d q 6 ). the end-of-write detection mode is enabled after the rising edge of we#, which initiates the program or erase cycle. the actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a data# polling or toggle bit read may be simultaneous with the completion of the write cycle. if this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either dq 7 or dq 6 . in order to prevent spuri- ous rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed loca- tion an additional two (2) times. if both reads are valid, then the device has completed the write cycle, otherwise the rejection is valid.
data sheet 512 kbit multi-purpose flash sst39sf512 3 ?2003 silicon storage technology, inc. s71149-05-000 11/03 data# polling (dq 7 ) when the sst39sf512 are in the internal program opera- tion, any attempt to read dq 7 will produce the complement of the true data. once the program operation is completed, dq 7 will produce true data. note that even thought dq 7 may have valid data immediately following the completion of an internal write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive read cycles after an interval of 1 s. during internal erase operation, any attempt to read dq 7 will produce a ?0?. once the internal erase operation is completed, dq 7 will produce a ?1?. the data# polling is valid after the rising edge of fourth we# (or ce#) pulse for program operation. for sector or chip- erase, the data# polling is valid after the rising edge of sixth we# (or ce#) pulse. see figure 7 for data# polling timing diagram and figure 16 for a flowchart. toggle bit (dq 6 ) during the internal program or erase operation, any con- secutive attempts to read dq 6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. the toggle bit will begin with ?1?. when the internal program or erase opera- tion is completed, the toggling will stop. the device is then ready for the next operation. the toggle bit is valid after the rising edge of fourth we# (or ce#) pulse for program oper- ation. for sector or chip-erase, the toggle bit is valid after the rising edge of sixth we# (or ce#) pulse. see figure 8 for toggle bit timing diagram and figure 16 for a flowchart. data protection the sst39sf512 provide both hardware and software fea- tures to protect nonvolatile data from inadvertent writes. hardware data protection noise/glitch protection: a we# or ce# pulse of less than 5 ns will not initiate a write cycle. v dd power up/down detection: the write operation is inhibited when v dd is less than 2.5v. write inhibit mode: forcing oe# low, ce# high, or we# high will inhibit the write operation. this prevents inadvert- ent writes during power-up or power-down. software data protection (sdp) the sst39sf512 provide the jedec approved software data protection scheme for all data alteration operations, i.e., program and erase. any program operation requires the inclusion of a series of three byte sequence. the three- byte load sequence is used to initiate the program opera- tion, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power- down. any erase operation requires the inclusion of six- byte load sequence. the sst39sf512 device is shipped with the software data protection permanently enabled. see table 4 for the specific software command codes. dur- ing sdp command sequence, invalid commands will abort the device to read mode, within t rc. product identification the product identification mode identifies the device as the sst39sf512 and sst39sf010 and manufacturer as sst. this mode may be accessed by software operations. users may use the software product identification opera- tion to identify the part (i.e., using the device id) when using multiple manufacturers in the same socket. for details, table 4 for software operation, figure 11 for the software id entry and read timing diagram and figure 17 for the id entry command sequence flowchart. product identification mode exit/reset in order to return to the standard read mode, the software product identification mode must be exited. exit is accom- plished by issuing the software id exit command sequence, which returns the device to the read operation. please note that the software reset command is ignored during an internal program or erase operation. see table 4 for software command codes, figure 12 for timing wave- form and figure 17 for a flowchart. table 1: p roduct i dentification address data manufacturer?s id 0000h bfh device id sst39sf512 0001h b4h t1.3 1149
4 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 1: p in a ssignments for 32- lead plcc y-decoder i/o buffers and data latches 1149 b1.1 address buffers & latches x-decoder dq 7 - dq 0 memory address oe# ce# we# superflash memory control logic f unctional b lock d iagram 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a14 a13 a8 a9 a11 oe# a10 ce# dq7 4 3 2 1 32 31 30 a12 a15 nc nc v dd we# nc 32-lead plcc top view 1149 f02b.6 14 15 16 17 18 19 20 dq1 dq2 v ss dq3 dq4 dq5 dq6
data sheet 512 kbit multi-purpose flash sst39sf512 5 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 2: p in a ssignments for 32- lead tsop (8 mm x 14 mm ) figure 3: p in a ssignments for 32- pin pdip a11 a9 a8 a13 a14 nc we# v dd nc nc a15 a12 a7 a6 a5 a4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1149 f01.3 standard pinout top view die up 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-pin pdip top view 1149 f02a.4 nc nc a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 v ss 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 v dd we# nc a14 a13 a8 a9 a11 oe# a10 ce# dq7 dq6 dq5 dq4 dq3
6 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 table 2: p in d escription symbol pin name functions a ms 1 -a 0 address inputs to provide memory addresses. during sector-erase a ms -a 12 address lines will select the sector. dq 7 -dq 0 data input/output to output data during read cycles and receive input data during write cycles. data is internally latched during a write cycle. the outputs are in tri-state when oe# or ce# is high. ce# chip enable to activate the device when ce# is low. oe# output enable to gate the data output buffers. we# write enable to control the write operations. v dd power supply to provide 4.5-5.5v supply v ss ground nc no connection unconnected pins. t2.4 1149 1. a ms = most significant address a ms = a 15 for sst39sf512 and a 16 for sst39sf010 table 3: o peration m odes s election mode ce# oe# we# dq address read v il v il v ih d out a in program v il v ih v il d in a in erase v il v ih v il x 1 1. x can be v il or v ih , but no other value. sector address, xxh for chip-erase standby v ih xxhigh z x write inhibit x v il xhigh z/ d out x xxv ih high z/ d out x product identification software mode v il v il v ih see table 4 t3.4 1149
data sheet 512 kbit multi-purpose flash sst39sf512 7 ?2003 silicon storage technology, inc. s71149-05-000 11/03 table 4: s oftware c ommand s equence command sequence 1st bus write cycle 2nd bus write cycle 3rd bus write cycle 4th bus write cycle 5th bus write cycle 6th bus write cycle addr 1 data addr 1 data addr 1 data addr 1 data addr 1 data addr 1 data byte-program 5555h aah 2aaah 55h 5555h a0h ba 2 data sector-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h sa x 3 30h chip-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h 5555h 10h software id entry 4,5 5555h aah 2aaah 55h 5555h 90h software id exit 6 xxh f0h software id exit 6 5555h aah 2aaah 55h 5555h f0h t4.3 1149 1. address format a 14 -a 0 (hex), address a 15 can be v il or v ih , but no other value, for the command sequence. 2. ba = program byte address 3. sa x for sector-erase; uses a ms -a 12 address lines a ms = most significant address a ms = a 15 for sst39sf512 4. the device does not remain in software product id mode if powered down. 5. with a ms -a 1 = 0; sst manufacturer?s id = bfh, is read with a 0 = 0, sst39sf512 device id = b4h, is read with a 0 = 1 6. both software id exit operations are equivalent absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) temperature under bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55c to +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c d. c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0. 5v to v dd +0.5v transient voltage (<20 ns) on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0v to v dd +2.0v voltage on a 9 pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to 14.0v package power dissipation capability (ta = 25c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w through hold lead soldering temperature (10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300c surface mount lead soldering temperature (3 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240c output short circuit current 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 m a 1. outputs shorted for no more than one second. no more than one output shorted at a time. o perating r ange range ambient temp v dd commercial 0c to +70c 4.5-5.5v industrial -40c to +85c 4.5-5.5v ac c onditions of t est input rise/fall time . . . . . . . . . . . . . . 10 ns output load . . . . . . . . . . . . . . . . . . . . . c l = 30 pf for 70 ns output load . . . . . . . . . . . . . . . . . . . . . c l = 100 pf for 90 ns see figures 13 and 14
8 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 table 5: dc o perating c haracteristics v dd = 4.5-5.5v 1 symbol parameter limits test conditions min max units i dd power supply current address input=v ilt /v iht , at f=1/t rc min v dd =v dd max read 2 30 ma ce#=v il , oe#=we#=v ih , all i/os open program and erase 50 ma ce#=we#=v il , oe#=v ih i sb1 standby v dd current (ttl input) 3ace#=v ih , v dd =v dd max i sb2 standby v dd current (cmos input) 50 a ce#=v dd -0.3v, v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 a v out =gnd to v dd , v dd =v dd max v il input low voltage 0.8 v v dd =v dd min v ih input high voltage 2.0 v v dd =v dd max v ol output low voltage 0.4 v i ol =2.1 ma, v dd =v dd min v oh output high voltage 2.4 v i oh =-400 a, v dd =v dd min t5.6 1149 1. typical conditions for the active current shown on the front data sheet page are average values at 25c (room temperature), and v dd = 5v for sf devices. not 100% tested. 2. values are for 70 ns conditions. see the multi-purpose flash power rating application note for further information. table 6: r ecommended s ystem p ower - up t imings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. power-up to read operation 100 s t pu-write 1 power-up to program/erase operation 100 s t6.1 1149 table 7: c apacitance (ta = 25c, f=1 mhz, other pins open) parameter description test condition maximum c i/o 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. i/o pin capacitance v i/o = 0v 12 pf c in 1 input capacitance v in = 0v 6 pf t7.0 1149 table 8: r eliability c haracteristics symbol parameter minimum specification units test method n end 1,2 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. 2. n end endurance rating is qualified as a 10,000 cycle minimum for the whole device. a sector- or block-level rating would result in a higher minimum specification. endurance 10,000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 + i dd ma jedec standard 78 t8.2 1149
data sheet 512 kbit multi-purpose flash sst39sf512 9 ?2003 silicon storage technology, inc. s71149-05-000 11/03 ac characteristics table 9: r ead c ycle t iming p arameters v dd = 4.5-5.5v symbol parameter sst39sf512-70 units min max t rc read cycle time 70 ns t ce chip enable access time 70 ns t aa address access time 70 ns t oe output enable access time 35 ns t clz 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. ce# low to active output 0 ns t olz 1 oe# low to active output 0 ns t chz 1 ce# high to high-z output 25 ns t ohz 1 oe# high to high-z output 25 ns t oh 1 output hold from address change 0 ns t9.5 1149 table 10: p rogram /e rase c ycle t iming p arameters symbol parameter min max units t bp byte-program time 30 s t as address setup time 0 ns t ah address hold time 30 ns t cs we# and ce# setup time 0 ns t ch we# and ce# hold time 0 ns t oes oe# high setup time 0 ns t oeh oe# high hold time 10 ns t cp ce# pulse width 40 ns t wp we# pulse width 40 ns t wph 1 1. this parameter is measured only for init ial qualification and after a design or proces s change that could affect this paramet er. we# pulse width high 30 ns t cph 1 ce# pulse width high 30 ns t ds data setup time 30 ns t dh 1 data hold time 0 ns t ida 1 software id access and exit time 150 ns t se sector-erase 10 ms t sce chip-erase 20 ms t10.1 1149
10 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 4: r ead c ycle t iming d iagram figure 5: we# c ontrolled p rogram c ycle t iming d iagram 1149 f03.2 address a ms-0 dq 7-0 we# oe# ce# t ce t rc t aa t oe t olz v ih high-z t clz t oh t chz high-z data valid data valid t ohz note: a ms = most significant address a ms = a 15 for sst39sf512 1149 f04.2 address a ms-0 note: a ms = most significant address a ms = a 15 for sst39sf512 dq 7-0 t dh t wph t ds t wp t ah t as t ch t cs ce# sw0 sw1 sw2 5555 2aaa 5555 addr aa 55 a0 data internal program operation starts byte (addr/data) oe# we# t bp
data sheet 512 kbit multi-purpose flash sst39sf512 11 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 6: ce# c ontrolled p rogram c ycle t iming d iagram figure 7: d ata # p olling t iming d iagram 1149 f05.2 address a ms-0 dq 7-0 t dh t cph t ds t cp t ah t as t ch t cs we# sw0 sw1 sw2 5555 2aaa 5555 addr aa 55 a0 data internal program operation starts byte (addr/data) oe# ce# t bp note: a ms = most significant address a ms = a 15 for sst39sf512 1149 f06.2 address a ms-0 note: a ms = most significant address a ms = a 15 for sst39sf512 dq 7 dd# d# d we# oe# ce# t oeh t oe t ce t oes
12 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 8: t oggle b it t iming d iagram figure 9: we# c ontrolled s ector -e rase t iming d iagram 1149 f07.2 address a ms-0 dq 6 we# oe# ce# t oe t oeh t ce t oes two read cycles with same outputs note note: toggle bit output is always high first. a ms = most significant address a ms = a 15 for sst39sf512 1149 f08.3 note: this device also supports ce# controlled sector-erase operation. the we# and ce# signals are interchageable as long as minimum timings are met. (see table 10) sa x = sector address a ms = most significant address a ms = a 15 for sst39sf512 address a ms-0 dq 7-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 55 30 55 aa 80 aa sa x oe# ce# six-byte code for sector-erase t se t wp
data sheet 512 kbit multi-purpose flash sst39sf512 13 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 10: we# c ontrolled c hip -e rase t iming d iagram figure 11: s oftware id e ntry and r ead 1149 f17.2 address a ms-0 note: this device also supports ce# controlled chip-erase operation. the we# and ce# signals are interchageable as long as minimum timings are met. (see table 10) sa x = sector address a ms = most significant address a ms = a 15 for sst39sf512 dq 7-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 55 10 55 aa 80 aa 5555 oe# ce# six-byte code for chip-erase t sce t wp 1149 f09.3 address a 14-0 t ida dq 7-0 we# sw0 sw1 sw2 5555 2aaa 5555 0000 0001 oe# ce# three-byte sequence for software id entry t wp t wph t aa bf device id 55 aa 90 device id = b4h for sst39sf512
14 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 12: s oftware id e xit and r eset 1149 f10.0 address a 14-0 dq 7-0 t ida t wp t whp we# sw0 sw1 sw2 5555 2aaa 5555 three-byte sequence for software id exit and reset oe# ce# aa 55 f0
data sheet 512 kbit multi-purpose flash sst39sf512 15 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 13: ac i nput /o utput r eference w aveforms figure 14: a t est l oad e xample 1149 f11.0 reference points output input v ht v lt v ht v lt v iht v ilt ac test inputs are driven at v iht (2.4v) for a logic ?1? and v ilt (0.4 v) for a logic ?0?. measurement reference points for inputs and outputs are v ht (2.0 v) and v lt (0.8 v). input rise and fall times (10% ? 90%) are <10 ns. note: v ht - v high te s t v lt - v low te s t v iht - v input high test v ilt - v input low test 1149 f12.1 to tester to dut c l r l low r l high v dd
16 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 15: b yte -p rogram a lgorithm 1149 f13.1 start load data: aah address: 5555h load data: 55h address: 2aaah load data: a0h address: 5555h byte address/byte data wait for end of program (tbp' data# polling bit or toggle bit operation) program completed
data sheet 512 kbit multi-purpose flash sst39sf512 17 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 16: w ait o ptions 1149 f14.0 wait t bp , t sce, or t se program/erase initiated internal timer toggle bit ye s ye s no no program/erase completed does dq 6 match? read same byte data# polling write completed write completed read byte is dq 7 = true data? read dq 7 byte-program initiated byte-program/ sector erase initiated
18 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 17: s oftware p roduct c ommand f lowcharts 1149 f15.1 load data: aah address: 5555h software product id entry command sequence load data: 55h address: 2aaah load data: 90h address: 5555h wait t ida read software id load data: aah address: 5555h software product id exit & reset command sequence load data: 55h address: 2aaah load data: f0h address: 5555h load data: f0h address: xxh return to normal operation wait t ida wait t ida return to normal operation
data sheet 512 kbit multi-purpose flash sst39sf512 19 ?2003 silicon storage technology, inc. s71149-05-000 11/03 figure 18: e rase c ommand s equence 1149 f16.1 load data: aah address: 5555h chip-erase command sequence load data: 55h address: 2aaah load data: 80h address: 5555h load data: 55h address: 2aaah load data: 10h address: 5555h load data: aah address: 5555h wait t sce chip-erase to ffh load data: aah address: 5555h sector-erase command sequence load data: 55h address: 2aaah load data: 80h address: 5555h load data: 55h address: 2aaah load data: 30h address: sa x load data: aah address: 5555h wait t se sector-erase to ffh
20 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 product ordering information note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combinations. valid combinations for sst39sf512 sst39sf512-70-4c-nh sst39sf512-70-4c-wh sst39sf512-70-4c-ph sst39sf512-70-4c-nhe sst39sf512-70-4c-whe sst39sf512-70-4i-nh sst39sf512-70-4i-wh sst39sf512-70-4i-nhe SST39SF512-70-4I-WHE environmental attribute e = non-pb package modifier h = 32 pins or leads package type n = plcc p = pdip w = tsop (type 1, die up, 8mm x 14mm) temperature range c = commercial = 0c to +70c i = industrial = -40c to +85c minimum endurance 4 = 10,000 cycles read access speed 70 = 70 ns device density 512 = 512 kbit voltag e s = 4.5-5.5v product series 39 = multi-purpose flash sst 39 sf 512 - 70 - 4c - wh e xx x xxxxx -xxx -xx -xxx x
data sheet 512 kbit multi-purpose flash sst39sf512 21 ?2003 silicon storage technology, inc. s71149-05-000 11/03 packaging diagrams 32- lead p lastic l ead c hip c arrier (plcc) sst p ackage c ode : nh 32- lead t hin s mall o utline p ackage (tsop) 8 mm x 14 mm sst p ackage c ode : wh .040 .030 .021 .013 .530 .490 .095 .075 .140 .125 .032 .026 .032 .026 .029 .023 .453 .447 .553 .547 .595 .585 .495 .485 .112 .106 .042 .048 .048 .042 .015 min. top view side view bottom view 1 232 .400 bsc 32-plcc-nh-3 note: 1. complies with jedec publication 95 ms-016 ae dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (max/min). 3. dimensions do not include mold flash. maximum allowable mold flash is .008 inches. 4. coplanarity: 4 mils. .050 bsc .050 bsc optional pin #1 identifier .020 r. max. r. x 30? 32-tsop-wh-7 note: 1. complies with jedec publication 95 mo-142 ba dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (max/min). 3. coplanarity: 0.1 mm 4. maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads. 1.20 max. 1mm pin # 1 identifier 12.50 12.30 14.20 13.80 0.70 0.50 8.10 7.90 0.27 0.17 0. 50 bsc 1.05 0.95 0.15 0.05 0.70 0.50 0?- 5? detail
22 data sheet 512 kbit multi-purpose flash sst39sf512 ?2003 silicon storage technology, inc. s71149-05-000 11/03 32- pin p lastic d ual i n - line p ins (pdip) sst p ackage c ode : ph table 11: r evision h istory number description date 03 2002 data book apr 2002 04 removed 1 mbit part added footnote for mpf power usage and typical conditions to table 5 on page 8 clarified the test conditions for power supply current and read parameters in table 5 part number changes - see page 20 for additional information 90 ns parts are no longer offered clarifed i dd write to be program and erase in table 5 on page 8 mar 2003 05 2004 data book added non-pb mpns and removed footnote (see page 20) nov 2003 32-pdip-ph-3 pin #1 identifier c l 32 1 base plane seating plane note: 1. complies with jedec publication 95 mo-015 ap dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (max/min). 3. dimensions do not include mold flash. maximum allowable mold flash is .010 inches. .200 .170 7? 4 plcs. .600 bsc .100 bsc .150 .120 .022 .016 .065 .045 .080 .070 .050 .015 .075 .065 1.655 1.645 .012 .008 0? 15? .625 .600 .550 .530 silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.sst.com

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